期刊
2D MATERIALS
卷 2, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/2/4/044006
关键词
graphene; Si nanomembrane; tunneling transistor; heterostructures
资金
- Global Frontier Research Center for Advanced Soft Electronics through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2014M3A6A5060933]
- Korea Institute of Machinery Materials [SC 1090]
- National Research Foundation of Korea [2014M3A6A5060933] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-SiNMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (I-on/I-off) of up to similar to 10(3), with a current density of 10(2) A cm(-2). We also observed significant dependence of Schottky barrier height Delta phi(b) on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier.
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