期刊
2D MATERIALS
卷 2, 期 1, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/2/1/015003
关键词
transition metal dichalcogenide (TMD); field-effect transistor (FET); quantum capacitance; field-effect mobility
资金
- NSF ECCS
- AFOSR
- Center for Low Energy Systems Technology (LEAST), one of the six centers
- STARnet phase of the Focus Center Research Program (FCRP), a Semiconductor Research Corporation
- MARCO
- DARPA
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1523356] Funding Source: National Science Foundation
In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity of commonly used expressions for extracting carrier densities and field-effect mobilities from the transfer characteristics of transistors with such channel materials. By comparison to experimental data, a new method for the accurate extraction of carrier densities and mobilities is outlined. The work thus highlights a fundamental difference between these materials and traditional semiconductors that must be considered in future experimental measurements.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据