期刊
MRS COMMUNICATIONS
卷 2, 期 3, 页码 91-96出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrc.2012.14
关键词
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资金
- Korea Science and Engineering Foundation (KOSEF) [2008-02807]
- Ministry of Education, Science and Technology
- National Research Foundation (NRF) [2010-0006910]
- WCU program [R-31-2008-000-10055-0]
- Korea Center for Artificial Photosynthesis [NRF-2009-C1AAA001-2009-0093879]
- National Research Foundation of Korea [2008-02807, 2010-0006910] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Applying a first-principles computational approach, we study the electronic and charge transport properties of the interfaces between metals and capped carbon nanotubes (CNTs) with various arrangements of topological defects. Observing the length scaling of resistance, we first show that capped CNTs exhibit only one CNT-body-determined low-slope scaling and the resulting very low long-length-limit resistance. The intrinsically low resistance (absence of Schottky-barrier-dominated high-slope scaling) of capped CNTs is next analyzed by the local density of states, which shows the formation of unusual propagating-type metal-induced gap states originating from the topological defect states that are well connected with CNT edge and body states.
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