相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz
Haifeng Sun et al.
IEEE ELECTRON DEVICE LETTERS (2010)
100 nm gate AlGaN/GaN HEMTs on silicon with fT=90 GHz
H. F. Sun et al.
ELECTRONICS LETTERS (2009)
High-Performance 0.1-μm Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz
Haifeng Sun et al.
IEEE ELECTRON DEVICE LETTERS (2009)
102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz
Haifeng Sun et al.
IEEE ELECTRON DEVICE LETTERS (2009)
High-power AlGaN/GaN HEMTs for Ka-band applications
T Palacios et al.
IEEE ELECTRON DEVICE LETTERS (2005)
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
BM Green et al.
IEEE ELECTRON DEVICE LETTERS (2000)
分享论文
