期刊
FRONTIERS IN NEUROSCIENCE
卷 9, 期 -, 页码 -出版社
FRONTIERS MEDIA SA
DOI: 10.3389/fnins.2015.00241
关键词
memristors; artificial synapses; tunnel junction; synaptic plasticity; neuromorphic systems
资金
- Ministry of Innovation, Science and Research (MIWF) of North Rhine-Westphalia
- Cluster of Excellence Cognitive Interaction Technology 'CITEC' at Bielefeld University - German Research Foundation (DFG) [EXC 277]
- Deutsche Forschungsgemeinschaft
- Open Access Publication Fund of Bielefeld University
We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms.
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