期刊
AIP ADVANCES
卷 8, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5034048
关键词
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资金
- Council for Science, Technology, and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), Next-generation power electronics
- NEDO
Improved performance in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by incorporating Ba into insulator/SiC interfaces was investigated by using a combination of the Hall effect and split capacitance-voltage measurements. It was found that a moderate annealing temperature causes negligible metal-enhanced oxidation, which is rather beneficial for increments in field-effect mobility (mu(FE)) of the FETs together with suppressed surface roughness of the gate oxides. The combined method revealed that, while severe mu(FE) degradation in SiC-MOSFETs is caused by a reduction of effective mobile carriers due to carrier trapping at the SiO2/SiC interfaces, Ba incorporation into the interface significantly increases mobile carrier density with greater impact than the widely-used nitrided interfaces. (C) 2018 Author(s).
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