期刊
AIP ADVANCES
卷 4, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4892823
关键词
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资金
- KAKENHI from Japan Society for the Promotion of Science (JSPS) [23310083]
- Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT)
- JSPS
- Grants-in-Aid for Scientific Research [13J03342] Funding Source: KAKEN
An attempt to reduce the SET voltage and RESET current of resistive switching (RS) memory was made using a geometric array of nanopeak (NP) structures. Bottoms of anodic porous alumina were used to form the NP structures that act as guides for the formation of conductive filaments that effectively concentrate the electric field. Samples were fabricated with flat surfaces (FS) and with two types of NP structure with different NP pitch. The NP samples provided SET voltages less than 2 V with narrow distributions and the RESET current was lower than that with the FS sample. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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