期刊
AIP ADVANCES
卷 3, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4812709
关键词
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资金
- U.S. Air Force Office of Scientific Research (AFOSR), STTR [FA8650-10-M-2117]
- U.S. Ferroics Company
- NSF [CBET-1126745]
- Office of the Associate Vice President for Research
- Ingram School of Engineering at Texas State University-San Marcos
- Lamar University Research Enhancement Grant [420254]
Since the discovery of colossal dielectric constant in CCTO supercapacitor in 2000, development of its practical application to energy storage has been of great interest. In spite of intensive efforts, there has been thus far, no report of proven application. The object of this research is to understand the reason for this lack of success and to find ways to overcome this limitation. Reported herein is the synthesis of our research in ceramic processing of this material and its characterization, particularly with the objective of identifying potential applications. Experimental results have shown that CCTO's permittivity and loss tangent, the two most essential dielectric parameters of fundamental importance for the efficiency of a capacitor device, are intrinsically coupled. They increase or decrease in tandem. Therefore, efforts to simultaneously retain the high permittivity while minimizing the loss tangent of CCTO might not succeed unless an entirely non-typical approach is taken for processing this material. Based on the experimental results and their analysis, it has been identified that it is possible to produce CCTO bulk ceramics with conventional processes having properties that can be exploited for fabricating an efficient energy storage device (EDS). We have additionally identified that CCTO can be used for the development of efficient solid state capacitors of Class II type comparable to the widely used barium titanate (BT) capacitors. Based on high temperature studies of the resistivity and the Seebeck coefficient it is found that CCTO is a wide bandgap n-type semiconductor material which could be used for high temperature electronics. The temperature dependence of the linear thermal expansion of CCTO shows the presence of possible phase changes at 220 and 770 degrees C the origin of which remains unexplained. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4812709]
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