4.4 Article

Electrostatic properties of few-layer MoS2 films

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AIP ADVANCES
卷 3, 期 4, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4802921

关键词

electrostatics; grain boundaries; molybdenum compounds; semiconductor thin films; surface potential

资金

  1. National Basic Research Program of China [2012CB921303]
  2. National Natural Science Foundation of China [11074211, 51172191, 51002129, 51272220]
  3. Hunan Provincial Innovation Foundation for Graduate [CX2011B254]

向作者/读者索取更多资源

Two-dimensional MoS2-based materials are considered to be one of the most attractive materials for next-generation nanoelectronics. The electrostatic properties are important in designing and understanding the performance of MoS2-based devices. By using Kelvin probe force microscopy, we show that few-layer MoS2 sheets exhibit uniform surface potential and charge distributions on their surfaces but have relatively lower surface potentials on the edges, folded areas as well as defect grain boundaries. Copyright 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4802921]

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