期刊
AIP ADVANCES
卷 2, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4727742
关键词
-
资金
- JSPS [23656024]
- Grants-in-Aid for Scientific Research [23656024] Funding Source: KAKEN
Resistive switching memory cells were fabricated on a plastic substrate via inkjet printing (IJP) of a solid polymer electrolyte (SPE). Using the high contrast between the surface energy of a metal electrode and the substrate, a thin SPE film could be deposited over the electrode by IJP. The fabricated Ag/SPE/Pt cells showed bipolar resistive switching behavior under electrical bias in vacuum and in air, which is attributed to the formation and dissolution of a metal filament between the electrodes. From the standpoint of the switching mechanism, our cell can be referred to as a 'gapless-type atomic switch'. The cells also exhibited stable switching behavior under substrate bending. This device fabrication technique has great potential for flexible switch/memory applications. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4727742]
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