期刊
AIP ADVANCES
卷 1, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3656246
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资金
- National Science Council of the Republic of China [97-2923-M-002-001-MY3]
- AFOSR (U. S. A.) [09-4108]
We report on experimental investigations of the growth of Ge1-xSnx film with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnx films with various Sn compositions up to 14% are deposited on a Ge buffer layer for growth at low temperatures close to the melting point of Sn. Analysis of various measurements shows that the Ge1-xSnx film is defect free in the XTEM image and that Sn is distributed almost uniformly in the film for Sn compositions up to 9.3%. The Sn composition of the films is higher than the Sn composition that is theoretically predicted to cause the energy band of Ge to change from an indirect to a direct bandgap; thus, the present investigation provides a method for growing direct bandgap GeSn film, which is desired for use in applications involving optoelectronic devices. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi:10.1063/1.3656246]
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