期刊
SCIENTIFIC REPORTS
卷 8, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-018-33065-y
关键词
-
资金
- Japan Society for the Promotion of Science (JSPS) [15H03981, 17K19019]
- Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials
- Cooperative Research Program of Network Joint Research Center for Materials and Devices - Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
- Center for Spintronics Research Network (CSRN) at Tohoku University
- US National Science Foundation at Brown University [DMR-1307056]
- Grants-in-Aid for Scientific Research [17K19019, 15H03981] Funding Source: KAKEN
One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR was a major deficiency of MTJs. Here we report a new phenomenon at room temperature, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in an MTJ system based on Co40Fe40B20/Mgo/Co40Fe40B20 . We have observed a maximum TMC value of 102% under appropriate biasing, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment for the bipolar biasing regions using Debye-Frohlich model combined with quartic barrier approximation and spin-dependent drift-diffusion model. Based on our calculation, we predict that the voltage-induced TMC ratio could reach 1100% in MTJs with a corresponding TMR value of 604%. Our work has provided a new understanding on the voltage-induced AC spin-dependent transport in MTJs. The results reported here may open a novel pathway for spintronics applications, e.g., non-volatile memories and spin logic circuits.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据