期刊
SCIENTIFIC REPORTS
卷 8, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-018-33987-7
关键词
-
资金
- United Kingdom Engineering and Physical Sciences Research Council (EPSRC) [EP/N009096/1, EP/L505110/1]
- Leverhulme Trust [RPG-2015-044]
- University of Warwick
- EPSRC [EP/N009096/1] Funding Source: UKRI
We report the findings of a study into the suitability of copper (I) thiocyanate (CuSCN) as a holetransport layer in inverted photovoltaic (PV) devices based on the black gamma phase (B-gamma) of CsSnI3 perovskite. Remarkably, when B-gamma-CsSnI3 perovskite is deposited from a dimethylformamide solution onto a 180-190 nm thick CuSCN film supported on an indium-tin oxide (ITO) electrode, the CuSCN layer is completely displaced leaving a perovskite layer with high uniformity and coverage of the underlying ITO electrode. This finding is confirmed by detailed analysis of the thickness and composition of the film that remains after perovskite deposition, together with photovoltaic device studies. The results of this study show that, whilst CuSCN has proved to be an excellent hole-extraction layer for high performance lead-perovskite and organic photovoltaics, it is unsuitable as a hole-transport layer in inverted B-gamma-CsSnI3 perovskite photovoltaics processed from solution.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据