期刊
SCIENTIFIC REPORTS
卷 7, 期 -, 页码 -出版社
NATURE RESEARCH
DOI: 10.1038/s41598-017-15610-3
关键词
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资金
- CNPq [305405/2014-4, 308742/2016-8]
- CAPES within PVE/CsF [23038.005810/2014-34, 88881.068355/2014-01]
- Sao Paulo Research Foundation (FAPESP) [2012/507383-3, 2014/13907-7]
Growth of X-enes, such as silicene, germanene and stanene, requires passivated substrates to ensure the survival of their exotic properties. Using first-principles methods, we study as-grown graphene on polar SiC surfaces as suitable substrates. Trilayer combinations with coincidence lattices with large hexagonal unit cells allow for strain-free group-IV monolayers. In contrast to the Si-terminated SiC surface, van der Waals-bonded honeycomb X-ene/graphene bilayers on top of the C-terminated SiC substrate are stable. Folded band structures show Dirac cones of the overlayers with small gaps of about 0.1 eV in between. The topological invariants of the peeled-off X-ene/graphene bilayers indicate the presence of topological character and the existence of a quantum spin Hall phase.
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