相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system
Jung Ho Yoon et al.
NANOSCALE (2017)
Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
Ilia Valov
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2017)
Interfacial Metal-Oxide Interactions in Resistive Switching Memories
Deok-Yong Cho et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
Anja Wedig et al.
NATURE NANOTECHNOLOGY (2016)
Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach
Daniela Carta et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
Marco Moors et al.
ACS NANO (2016)
Memristor and selector devices fabricated from HfO2-xNx
B. J. Murdoch et al.
APPLIED PHYSICS LETTERS (2016)
Resistive switching characteristics in memristors with Al2O3/TiO2 and TiO2/Al2O3 bilayers
Liudmila Alekseeva et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devices
D. Carta et al.
NANOTECHNOLOGY (2016)
Repeatable, accurate, and high speed multi-level programming of memristor 1T1R arrays for power efficient analog computing applications
Emmanuelle J. Merced-Grafals et al.
NANOTECHNOLOGY (2016)
Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses
Alexander Serb et al.
NATURE COMMUNICATIONS (2016)
High Density Crossbar Arrays with Sub-15 nm Single Cells via Liftoff Process Only
Ali Khiat et al.
SCIENTIFIC REPORTS (2016)
Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application
A. Prakash et al.
APPLIED PHYSICS LETTERS (2015)
A μ-Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays
Radu Berdan et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Training andoperation of an integrated neuromorphic network based on metal-oxide memristors
M. Prezioso et al.
NATURE (2015)
Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory
Baiwen Zeng et al.
JOURNAL OF APPLIED PHYSICS (2014)
Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations
L. Zhao et al.
NANOSCALE (2014)
Resistive switching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface
B. Hudec et al.
THIN SOLID FILMS (2014)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
Multibit Operation of TiOx-Based ReRAM by Schottky Barrier Height Engineering
Jubong Park et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
John Paul Strachan et al.
NANOTECHNOLOGY (2011)
Sub-nanosecond switching of a tantalum oxide memristor
Antonio C. Torrezan et al.
NANOTECHNOLOGY (2011)
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures
Myoung-Jae Lee et al.
NATURE MATERIALS (2011)
'Memristive' switches enable 'stateful' logic operations via material implication
Julien Borghetti et al.
NATURE (2010)
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon et al.
NATURE NANOTECHNOLOGY (2010)
CMOS compatible nanoscale nonvolatile resistance, switching memory
Sung Hyun Jo et al.
NANO LETTERS (2008)
The missing memristor found
Dmitri B. Strukov et al.
NATURE (2008)
Memristive switching mechanism for metal/oxide/metal nanodevices
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2008)
Materials science - Who wins the nonvolatile memory race?
G. I. Meijer
SCIENCE (2008)
High speed resistive switching in Pt/TiO2/TiN film for nonvolatile memory application
Chikako Yoshida et al.
APPLIED PHYSICS LETTERS (2007)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Ultra-high-density phase-change storage and memory
HF Hamann et al.
NATURE MATERIALS (2006)
Ferroelectric thin films: Review of materials, properties, and applications
N. Setter et al.
JOURNAL OF APPLIED PHYSICS (2006)
分享论文
