相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Zinc nitride as a potential high-mobility transparent conductor
Xiang Cao et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)
Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors
Angela N. Fioretti et al.
ADVANCED ELECTRONIC MATERIALS (2017)
Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions
Ruifeng Qin et al.
APPLIED PHYSICS LETTERS (2016)
Synthesis of ZnSnN2 crystals via a high-pressure metathesis reaction
F. Kawamura et al.
CRYSTAL RESEARCH AND TECHNOLOGY (2016)
Comparative study of electron transport mechanisms in epitaxial and polycrystalline zinc nitride films
Xiang Cao et al.
JOURNAL OF APPLIED PHYSICS (2016)
Photovoltaic materials: Present efficiencies and future challenges
Albert Polman et al.
SCIENCE (2016)
Stabilization of orthorhombic phase in single-crystal ZnSnN2 films
Nancy Senabulya et al.
AIP ADVANCES (2016)
Many-electron effects on the dielectric function of cubic In2O3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
Martin Feneberg et al.
PHYSICAL REVIEW B (2016)
Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe
Peter Jost et al.
ADVANCED FUNCTIONAL MATERIALS (2015)
Oxygen-Doped Zinc Nitride as a High-Mobility Nitride-Based Semiconductor
Xiang Cao et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2015)
Determination of the basic optical parameters of ZnSnN2
Fuling Deng et al.
OPTICS LETTERS (2015)
Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber
Tim D. Veal et al.
ADVANCED ENERGY MATERIALS (2015)
Combinatorial insights into doping control and transport properties of zinc tin nitride
Angela N. Fioretti et al.
JOURNAL OF MATERIALS CHEMISTRY C (2015)
Phase Stability and Defect Physics of a Ternary ZnSnN2 Semiconductor: First Principles Insights
Shiyou Chen et al.
ADVANCED MATERIALS (2014)
Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2
Lise Lahourcade et al.
ADVANCED MATERIALS (2013)
Growth, disorder, and physical properties of ZnSnN2
N. Feldberg et al.
APPLIED PHYSICS LETTERS (2013)
Synthesis, lattice structure, and band gap of ZnSnN2
Paul C. Quayle et al.
MRS COMMUNICATIONS (2013)
On the zinc nitride properties and the unintentional incorporation of oxygen
C. Garcia Nunez et al.
THIN SOLID FILMS (2012)
VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data
Koichi Momma et al.
JOURNAL OF APPLIED CRYSTALLOGRAPHY (2011)
Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy
Marius Millot et al.
PHYSICAL REVIEW B (2011)
Quasiparticle band structure of Zn-IV-N2 compounds
Atchara Punya et al.
PHYSICAL REVIEW B (2011)
Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states
Toshio Kamiya et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)
Defect complexes and cluster doping of InN: First-principles investigations
X. M. Duan et al.
PHYSICAL REVIEW B (2009)
First-principles study of phonons and related ground-state properties and spectra in Zn-IV-N2 compounds
Tula R. Paudel et al.
PHYSICAL REVIEW B (2008)
Simulation of In0.65Ga0.35N single-junction solar cell
Xiaobin Zhang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)
Transport properties of d-electron-based transparent conducting oxide:: Anatase Ti1-xNbxO2
Yutaka Furubayashi et al.
JOURNAL OF APPLIED PHYSICS (2007)
Structural, electronic, and optical properties of oxygen defects in Zn3N2
Run Long et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2007)
Substitutional and interstitial oxygen in wurtzite GaN
AF Wright
JOURNAL OF APPLIED PHYSICS (2005)
Effects of carrier concentration on the dielectric function of ZnO:Ga and In2O3:Sn studied by spectroscopic ellipsometry:: Analysis of free-carrier and band-edge absorption -: art. no. 075109
H Fujiwara et al.
PHYSICAL REVIEW B (2005)
Effects of electron concentration on the optical absorption edge of InN
J Wu et al.
APPLIED PHYSICS LETTERS (2004)
Some effects of oxygen impurities on AlN and GaN
GA Slack et al.
JOURNAL OF CRYSTAL GROWTH (2002)
Dielectric function models for describing the optical properties of hexagonal GaN
AB Djurisic et al.
JOURNAL OF APPLIED PHYSICS (2001)
Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x
C Skierbiszewski et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
