期刊
SCIENTIFIC REPORTS
卷 7, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep45584
关键词
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资金
- National Natural Science Foundation of China [21301032]
- National Key Research and Development Program of China [2016YFA0203900]
- 1000 Plan Program for Young Talents [EZH1615525, KHH1615002]
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of similar to 6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries (GBs) engineering in the basal plane. The other way is to invite foreign atoms, such as carbon, to forge bizarre hybrid structures like hetero-junctions or semiconducting h-BNC materials. Here we successfully developed a general chemical method to synthesize these different h-BN derivatives, showcasing how the chemical structure can be manipulated with or without a graphene precursor, and the bandgap be tuned to similar to 2 eV, only one third of the pristine one's.
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