4.7 Article

A High-Power Broadband Terahertz Source Enabled by Three-Dimensional Light Confinement in a Plasmonic Nanocavity

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SCIENTIFIC REPORTS
卷 7, 期 -, 页码 -

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NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-017-04553-4

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资金

  1. Moore Inventor Fellowship
  2. Department of Energy (DoE), Office of Science, Basic Energy Sciences (BES) [DE-SC0016925]
  3. Presidential Early Career Award for Scientists and Engineers [N00014-14-1-0573]
  4. Directorate For Engineering [1609954] Funding Source: National Science Foundation
  5. Directorate For Engineering
  6. Div Of Electrical, Commun & Cyber Sys [1608980] Funding Source: National Science Foundation
  7. Div Of Electrical, Commun & Cyber Sys [1609954] Funding Source: National Science Foundation

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The scope and potential uses of time-domain terahertz imaging and spectroscopy are mainly limited by the low optical-to-terahertz conversion efficiency of photoconductive terahertz sources. State-of-theart photoconductive sources utilize short-carrier-lifetime semiconductors to recombine carriers that cannot contribute to efficient terahertz generation and cause additional thermal dissipation. Here, we present a novel photoconductive terahertz source that offers a significantly higher efficiency compared with terahertz sources fabricated on short-carrier-lifetime substrates. The key innovative feature of this source is the tight three-dimensional confinement of the optical pump beam around the terahertz nanoantennas that are used as radiating elements. This is achieved by means of a nanocavity formed by plasmonic structures and a distributed Bragg reflector. Consequently, almost all of the photo-generated carriers can be routed to the terahertz nanoantennas within a sub-picosecond time-scale. This results in a very strong, ultrafast current that drives the nanoantennas to produce broadband terahertz radiation. We experimentally demonstrate that this terahertz source can generate 4 mW pulsed terahertz radiation under an optical pump power of 720 mW over the 0.1-4 THz frequency range. This is the highest reported power level for terahertz radiation from a photoconductive terahertz source, representing more than an order of magnitude of enhancement in the optical-to-terahertz conversion efficiency compared with state-of-the-art photoconductive terahertz sources fabricated on short-carrier-lifetime substrates.

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