4.7 Article

Anomalous resistivity upturn in epitaxial L21-Co2MnAl films

期刊

SCIENTIFIC REPORTS
卷 7, 期 -, 页码 -

出版社

NATURE PUBLISHING GROUP
DOI: 10.1038/srep42931

关键词

-

资金

  1. MOST of China [2015CB921503]
  2. NSFC [61334006]
  3. NSF MRSEC program [DMR-1120296]

向作者/读者索取更多资源

Despite of the great scientific and technology interest, highly ordered full-Heusler L2(1)-Co2MnAl films have remained a big challenge in terms of the availability and the electrical transport. Here we report the controllable growth and the intriguing transport behavior of epitaxial L2(1)-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T-1/2 dependence, a robust independence of magnetic fields, and a close relevance to structural disorder. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electronelectron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particlehole channel EEI the most likely physical source. Our result highlights a considerable tunability of the structural and electronic disorder of magnetic films by varying growth temperature, affording unprecedented insights into the origin of the resistivity upturn.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据