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Haiyong Gao et al.
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Asif Khan et al.
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D. S. Wuu et al.
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Hongbo Yu et al.
JOURNAL OF APPLIED PHYSICS (2006)
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JC Zhang et al.
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Bending of dislocations in GaN during epitaxial lateral overgrowth
S Gradecak et al.
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DM Follstaedt et al.
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T Wang et al.
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Refractive sapphire microlenses fabricated by chlorine-based inductively coupled plasma etching
SH Park et al.
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A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE
S Sakai et al.
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