期刊
SCIENTIFIC REPORTS
卷 6, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep26169
关键词
-
资金
- National Natural Science Foundation of China [61076007, 11174348]
- Chinese Academy of Sciences
We report a novel three-terminal device fabricated on MgZnO/ZnO/MgZnO triple-layer architecture. Because of the combined barrier modulation effect by both gate and drain biases, the device shows an unconventional I-V characteristics compared to a common field effect transistor. The photoresponse behavior of this unique device was also investigated and applied in constructing a new type ultraviolet (UV) photodetector, which may be potentially used as an active element in a UV imaging array. More significantly, the proper gate bias-control offers a new pathway to overcome the common persistent photoconductivity (PPC) effect problem. Additionally, the MgZnO:F as a channel layer was chosen to optimize the photoresponse properties, and the spectrum indicated a gate bias-dependent wavelength-selectable feature for different response peaks, which suggests the possibility to build a unique dual-band UV photodetector with this new architecture.
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