4.7 Article

Tunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms

期刊

SCIENTIFIC REPORTS
卷 6, 期 -, 页码 -

出版社

NATURE PUBLISHING GROUP
DOI: 10.1038/srep28330

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资金

  1. National Natural Science Foundation of China (NSFC) [51502059, 61172001, 21373068, 61390502]
  2. National Basic Research Program of China [2013CB632900]
  3. Foundational Research Funds for the Central Universities [HIT. NSRIF. 201641]
  4. State Key Laboratory of Robotics and System (HIT) [SKLRS201509B]
  5. China Postdoctoral Science Foundation [2015M570285]
  6. Heilongjiang Provincial Postdoctoral Science Foundation [LBH-Z15053]
  7. Foundation for Innovative Research Groups of the National Natural Science Foundation of China [51521003]
  8. Royal Academy of Engineering-Research Exchanges with China Award
  9. Royal Academy of Engineering-Research Exchanges with India Award

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Single-layer and mono-component doped graphene is a crucial platform for a better understanding of the relationship between its intrinsic electronic properties and atomic bonding configurations. Large-scale doped graphene films dominated with graphitic nitrogen (GG) or pyrrolic nitrogen ( PG) were synthesized on Cu foils via a free radical reaction at growth temperatures of 230-300 degrees C and 400-600 degrees C, respectively. The bonding configurations of N atoms in the graphene lattices were controlled through reaction temperature, and characterized using Raman spectroscopy, X-ray photoelectron spectroscopy and scanning tunneling microscope. The GG exhibited a strong n-type doping behavior, whereas the PG showed a weak n-type doping behavior. Electron mobilities of the GG and PG were in the range of 80.1-340 cm(2) V-1.s(-1) and 59.3-160.6 cm2 V-1.s(-1), respectively. The enhanced doping effect caused by graphitic nitrogen in the GG produced an asymmetry electron-hole transport characteristic, indicating that the long-range scattering (ionized impurities) plays an important role in determining the carrier transport behavior. Analysis of temperature dependent conductance showed that the carrier transport mechanism in the GG was thermal excitation, whereas that in the PG, was a combination of thermal excitation and variable range hopping.

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