4.7 Article

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

期刊

SCIENTIFIC REPORTS
卷 6, 期 -, 页码 -

出版社

NATURE PUBLISHING GROUP
DOI: 10.1038/srep27553

关键词

-

资金

  1. Deutscher Akademischer Austausch dienst (DAAD), Germany [A/12/76203]
  2. CSIR India [09/086/(1013)/2010-EMR-I]
  3. Indo-German cooperation project (DST-DAAD)
  4. Department of Electronics and Information Technology (Deity)
  5. German Research foundation (DFG) via the cluster of excellence Engineering of Advanced Materials at the University of Erlangen Nuremberg
  6. DFG [FOR 1616]

向作者/读者索取更多资源

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据