期刊
SCIENTIFIC REPORTS
卷 6, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep27553
关键词
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资金
- Deutscher Akademischer Austausch dienst (DAAD), Germany [A/12/76203]
- CSIR India [09/086/(1013)/2010-EMR-I]
- Indo-German cooperation project (DST-DAAD)
- Department of Electronics and Information Technology (Deity)
- German Research foundation (DFG) via the cluster of excellence Engineering of Advanced Materials at the University of Erlangen Nuremberg
- DFG [FOR 1616]
The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.
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