期刊
SCIENTIFIC REPORTS
卷 6, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep21536
关键词
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资金
- JST-CREST Phase Interface Science for Highly Efficient Energy Utilization, JST, Japan
- World Premier International (WPI) Research Center Initiative for Atoms, Molecules and Materials, MEXT, Japan
- Japan society for the promotion of science (JSPS) [26107504]
- General Research Fund from the Hong Kong Research Grants Council [622813]
- Grants-in-Aid for Scientific Research [26107504] Funding Source: KAKEN
Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo1-xWxS2 crystals, the successful growth of Mo1-xWxS2 monolayers with tunable Mo/W ratios has not been realized by conventional chemical vapor deposition. Herein, we developed a low-pressure chemical vapor deposition (LP-CVD) method to grow monolayer Mo1-xWxS2 (x = 0-1) 2D crystals with a wide range of Mo/W ratios. Raman spectroscopy and high-resolution transmission electron microscopy demonstrate the homogeneous mixture of Mo and W in the 2D alloys. Photoluminescence measurements show that the optical band gaps of the monolayer Mo1-xWxS2 crystals strongly depend on the Mo/W ratios and continuously tunable band gap can be achieved by controlling the W or Mo portion by the LP-CVD.
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