4.7 Article

Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

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SCIENTIFIC REPORTS
卷 6, 期 -, 页码 -

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NATURE RESEARCH
DOI: 10.1038/srep22214

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资金

  1. Dutch Organization for Fundamental Research on Matter (NWO/OCW)
  2. Ministerio de Economia y Competitividad (MINECO) [FIS2013-43130-P, CSD2010-00044]
  3. Grupo Consolidado UPV/EHU del Gobierno Vasco [IT578-13]
  4. Ministerio de Educacion, Cultura y Deporte [FPU12/01576]
  5. BBVA Foundation through the fellowship I Convocatoria de Ayudas Fundacion BBVA a Investigadores, Innovadores y Creadores Culturales
  6. MINECO (Ramon y Cajal program) [RYC-2014-01406]
  7. MICINN [MAT2014-58399-JIN]
  8. MINECO [MAT2011-22780]

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We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in qualitative agreement with the observed experimental optical transmittance.

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