期刊
SCIENTIFIC REPORTS
卷 4, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep05931
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资金
- Natural Science Foundation of China [90923001]
- International Science & Technology Cooperation Program of China [2010DFB13640, 2011DFA51880]
- National 111 Project of China [B14040]
- Fundamental Research Funds for the Central Universities
- China Young 1000-Talent Program
- AFRL through UES [S-875-060-018]
- Semiconductor Research Corporation
- National Natural Science Foundation of China (NSFC) [51328203]
- U.S. Office of Naval Research [N00014-12-1-1045]
- Natural Science and Engineering Research Council of Canada
The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O-3-0.29PbTiO(3) (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.
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