期刊
SCIENTIFIC REPORTS
卷 4, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep06123
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资金
- National Science Council, Taiwan [NSC 99-2221-E-009-040-MY3]
We investigate the growth of Cu films on two different Cu seed layers: one with regular < 111 >-oriented grains and the other with very strong < 111 >-preferred orientation. It is found that densely-packed nanotwinned Cu (nt-Cu) can be grown by pulsed electroplating on the strong < 111 >-oriented Cu seed layer without a randomly-oriented transition layer between the nt-Cu and the Cu seed layer. The electroplated nt-Cu grow almost epitaxially on the seed layer and formed < 111 >-oriented columnar structures. However, with the regular < 111 >-oriented Cu seed, there is a randomly-oriented transition layer between the nt-Cu and the regular < 111 >-oriented Cu seed. The results indicate that the seed layer plays a crucial role on the regularity of < 111 >-oriented nanotwinned Cu.
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