期刊
SCIENTIFIC REPORTS
卷 4, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep05333
关键词
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资金
- NSF BRIGE [1125743]
- NSF CAREER [1254271]
- IBM Faculty Award
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1254271] Funding Source: National Science Foundation
This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO2 material. The mechanism behind reconfiguration was studied and a unified model is presented to explain the underlying device physics. The model was then utilized to show the application of these devices in speech recognition. A comparison between a 20 nm x 20 nm sized synaptic memory device with that of a state-of-the-art VLSI SRAM synapse showed similar to 10x reduction in area and >10(6) times reduction in the power consumption per learning cycle.
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