期刊
SCIENTIFIC REPORTS
卷 4, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep04622
关键词
-
资金
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2012R1A2A2A01013899]
- SUTD-ZJU grant [SUTD-ZJU/RES/01/2012]
- Singapore MOE Tier 2 grant [MOE 2012-T2-1-097]
A new deep acceptor state is identified by density functional theory calculations, and physically activated by an Au ion implantation technique to overcome the high energy barriers. And an acceptor-compensated charge transport mechanism that controls the chemical sensing performance of Au-implanted SnO2 nanowires is established. Subsequently, an equation of electrical resistance is set up as a function of the thermal vibrations, structural defects (Au implantation), surface chemistry (1 ppm NO2), and solute concentration. We show that the electrical resistivity is affected predominantly not by the thermal vibrations, structural defects, or solid solution, but the surface chemistry, which is the source of the improved chemical sensing. The response and recovery time of chemical sensing is respectively interpreted from the transport behaviors of major and minor semiconductor carriers. This acceptor-compensated charge transport mechanism provides novel insights not only for sensor development but also for research in charge and chemical dynamics of nano-semiconductors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据