期刊
SCIENTIFIC REPORTS
卷 4, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep05235
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资金
- Stichting voor de Technologische Wetenschappen (STW)
- Japan Society for the Promotion of Science [19GS1209, 24226009]
- Ministry of Education, Culture, Sports, Science and Technology of Japan
We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (similar to 10%) and (similar to 3%) under continuous wave and pulsed excitation, respectively.
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