期刊
SCIENTIFIC REPORTS
卷 3, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep03249
关键词
-
资金
- National Natural Science Foundation of China [51162023, 21263013, 51002073, 21001062]
- Project for Young Scientist Training of Jiangxi Province [20133BCB23002]
- Natural Science Foundation of Jiangxi Province [20132BAB206005, 20114BAB206027]
- Foundation of Jiangxi Educational Committee [GJJ13058]
Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn2SnO4-sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol-gel approach followed by post-annealing. The back-to-back bipolar RS properties were observed in the Ohmic contact two-terminal devices based on individual core/shell nanowires. With increasing bias to about 1.5 V, it changes from high-resistance states (HRS) to low-resistance states, and however, it can be restored to HRS by reverse bias. We propose a new mechanism, which is attributed to the injection of electrons into/from interfacial states, arising from the lattice mismatch at ZnO/Zn2SnO4 heterointerface. Upon applying negative/positive voltage at one end of devices, where interfacial states are filled/emptied, barrier will be eliminated/created, resulting into symmetric RS characteristics. The behavior of storage and removal charges demonstrates that the heterostructures have excellent properties for the application in resistance random access memory.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据