期刊
SCIENTIFIC REPORTS
卷 3, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep02747
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资金
- U.S. Department of Energy, Office of Basic Energy Sciences, Material Sciences and Engineering Division [DE-SC0001762]
- ARO [W911NF-07-01-015]
Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This study examines a bell-shape'' negative GMR that grows in magnitude with decreasing temperatures in mm-wide devices fabricated from the high-mobility GaAs/AlGaAs 2-Dimensional Electron System (2DES). Experiments show that the span of this magnetoresistance on the magnetic-field-axis increases with decreasing device width, W, while there is no concurrent Hall resistance, R-xy, correction. A multi-conduction model, including negative diagonal-conductivity, and non-vanishing off-diagonal conductivity, reproduces experimental observations. The results suggest that a size effect in the mm-wide 2DES with mm-scale electron mean-free-paths is responsible for the observed non-ohmic'' size-dependent negative GMR.
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