4.7 Article

Identification of individual and few layers of WS2 using Raman Spectroscopy

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SCIENTIFIC REPORTS
卷 3, 期 -, 页码 -

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NATURE RESEARCH
DOI: 10.1038/srep01755

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资金

  1. U.S. Army Research Office MURI [W911NF-11-1-0362]
  2. Materials Simulation Center of the Materials Research Institute, the Research Computing and Cyberinfrastructure unit of Information Technology Services
  3. JST-Japan under the Japanese regional Innovation Strategy Program by the Excellence
  4. Penn State Center for Nanoscale Science Seed grant on 2-D Layered Materials [DMR-0820404]
  5. Pennsylvania State University Materials Research Institute Nanofabrication Lab
  6. National Science Foundation [ECS-0335765]
  7. F.R.S.-FNRS of Belgium
  8. Communaute Francaise de Belgique

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The Raman scattering of single-and few-layered WS2 is studied as a function of the number of S-W-S layers and the excitation wavelength in the visible range (488, 514 and 647 nm). For the three excitation wavelengths used in this study, the frequency of the A(1g)(C) phonon mode monotonically decreases with the number of layers. For single-layer WS2, the 514.5 nm laser excitation generates a second-order Raman resonance involving the longitudinal acoustic mode (LA(M)). This resonance results from a coupling between the electronic band structure and lattice vibrations. First-principles calculations were used to determine the electronic and phonon band structures of single-layer and bulk WS2. The reduced intensity of the 2LA mode was then computed, as a function of the laser wavelength, from the fourth-order Fermi golden rule. Our observations establish an unambiguous and nondestructive Raman fingerprint for identifying single-and few-layered WS2 films.

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