期刊
SCIENTIFIC REPORTS
卷 2, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep00590
关键词
-
资金
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under [DE-AC02-05CH11231]
The Fermi velocity, v(F), is one of the key concepts in the study of a material, as it bears information on a variety of fundamental properties. Upon increasing demand on the device applications, graphene is viewed as a prototypical system for engineering v(F). Indeed, several efforts have succeeded in modifying v(F) by varying charge carrier concentration, n. Here we present a powerful but simple new way to engineer v(F) while holding n constant. We find that when the environment embedding graphene is modified, the v(F) of graphene is (i) inversely proportional to its dielectric constant, reaching v(F) similar to 2.5 x 10(6) m/s, the highest value for graphene on any substrate studied so far and (ii) clearly distinguished from an ordinary Fermi liquid. The method demonstrated here provides a new route toward Fermi velocity engineering in a variety of two-dimensional electron systems including topological insulators.
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