相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation
S. Ruffell et al.
APPLIED PHYSICS LETTERS (2011)
Internal stresses and formation of switchable nanowires at thin silica film edges
J. C. Phillips
JOURNAL OF APPLIED PHYSICS (2011)
Silicon Oxide: A Non-innocent Surface for Molecular Electronics and Nanoelectronics Studies
Jun Yao et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2011)
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
Kyung Min Kim et al.
NANOTECHNOLOGY (2011)
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures
Myoung-Jae Lee et al.
NATURE MATERIALS (2011)
Structural distortions of semiconducting silicon crystals caused by constant electric field
A. O. Aboyan et al.
CRYSTAL RESEARCH AND TECHNOLOGY (2010)
Resistive Switches and Memories from Silicon Oxide
Jun Yao et al.
NANO LETTERS (2010)
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon et al.
NATURE NANOTECHNOLOGY (2010)
Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
Yu Chao Yang et al.
NANO LETTERS (2009)
The mechanism of electroforming of metal oxide memristive switches
J. Joshua Yang et al.
NANOTECHNOLOGY (2009)
Resistive Switching in Nanogap Systems on SiO2 Substrates
Jun Yao et al.
SMALL (2009)
Electronic two-terminal bistable graphitic memories
Yubao Li et al.
NATURE MATERIALS (2008)
Resistive switching in transition metal oxides
Akihito Sawa
MATERIALS TODAY (2008)
Materials science - Who wins the nonvolatile memory race?
G. I. Meijer
SCIENCE (2008)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Bipolar and unipolar resistive switching in Cu-doped SiO2
Christina Schindler et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
D. C. Kim et al.
APPLIED PHYSICS LETTERS (2006)
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
K Szot et al.
NATURE MATERIALS (2006)
Structure evolution of silicon nanocrystals under electron irradiation
XW Du et al.
SCRIPTA MATERIALIA (2005)
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
BJ Choi et al.
JOURNAL OF APPLIED PHYSICS (2005)
Direct observation of nanoscale switching centers in metal/molecule/metal structures
CN Lau et al.
NANO LETTERS (2004)
Thermal stability of metastable silicon phases produced by nanoindentation
DB Ge et al.
JOURNAL OF APPLIED PHYSICS (2004)
High-resolution transmission electron microscopy study of metastable silicon phases produced by nanoindentation
DB Ge et al.
JOURNAL OF APPLIED PHYSICS (2003)
Formation of crystalline Si nanodots in SiO2 films by electron irradiation
XW Du et al.
APPLIED PHYSICS LETTERS (2003)