期刊
RSC ADVANCES
卷 8, 期 50, 页码 28804-28809出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8ra03546f
关键词
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资金
- National Natural Science Foundation of China [11604133, 61405085, 61775089, 51472105, 51502107]
- National Key R&D Program of China [2016YFB0402105]
- Shandong Provincial Natural Science Foundation [ZR2017QA013]
- Industrial Alliance Fund of Shandong Provincial Key Laboratory [SDKL2016038]
- Open Project of State Key Laboratory of Superhard Materials (Jilin University) [201503, 201612]
- Project of Science and Technology Plan for University of Shandong Province [J16LJ05]
- Initial Foundation for Doctor Program of Liaocheng University [318051612, 318051610]
- Special Construction Project Fund for Shandong Province Taishan Scholars
A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved I-V characteristics and relatively high performance for the electrical transport properties.
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