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注意:仅列出部分参考文献,下载原文获取全部文献信息。Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing
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Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers
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Direct gap electroluminescence from Si/Ge1-ySny p-i-n heterostructure diodes
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Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature
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Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser
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Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors
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Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
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Theory of optical gain of Ge-SixGeySn1-x-y quantum-well lasers
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