期刊
OPTICAL MATERIALS EXPRESS
卷 4, 期 6, 页码 1178-1185出版社
OPTICAL SOC AMER
DOI: 10.1364/OME.4.001178
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资金
- Ministry of Science and Technology of Taiwan [NSC 101-2221-E-194-028, NSC 101-2112-M-002-015-MY3]
We report an investigation on low dimensional Ge1-xSnx/Ge heterostructures. A series of strained-layer Ge1-xSnx/Ge superlattices with various Sn contents up to a threshold value that affords a direct bandgap is achieved by the technique of low temperature growth using molecular beam epitaxy. The Sn composition, strain status, and crystallographic are systematically characterized by cross-sectional transmission electron microscope and x-ray diffraction. Optical absorption measurements were carried out at room temperature to determine the bandgap energies of the Ge1-xSnx/Ge superlattices. Analyzing the direct transition energies reveals the room-temperature quantum confinement in the Ge1-xSnx/Ge superlattices. Present investigation demonstrates the growth and the quantum confinement of Ge1-xSnx/Ge superlattices, moving an important step forward toward the development of high-performance photonic devices based on Sn-containing group-IV low-dimensional structures. (C) 2014 Optical Society of America
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