相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler
M. Lamponi et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2012)
Uniformity improvement of selectively-grown InGaAs micro-discs on Si
Masakazu Sugiyama et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth
Carl Junesand et al.
JOURNAL OF ELECTRONIC MATERIALS (2012)
Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation
R. Loo et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2012)
III-Vs on Si for photonic applications-A monolithic approach
Zhechao Wang et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2012)
III-V/Si hybrid photonic devices by direct fusion bonding
Katsuaki Tanabe et al.
SCIENTIFIC REPORTS (2012)
Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)
Andreas Beyer et al.
JOURNAL OF APPLIED PHYSICS (2011)
GaP-nucleation on exact Si (001) substrates for III/V device integration
Kerstin Volz et al.
JOURNAL OF CRYSTAL GROWTH (2011)
Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds
Yoshiaki Nakamura et al.
NANOTECHNOLOGY (2011)
Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer
F. Olsson et al.
JOURNAL OF APPLIED PHYSICS (2008)
Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate
B. Kunert et al.
THIN SOLID FILMS (2008)
Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
T Paskova et al.
APPLIED PHYSICS LETTERS (2006)
Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
J Zou et al.
APPLIED PHYSICS LETTERS (2002)
TEM analysis of epitaxial semiconductor layers with high stacking fault densities considering artifacts induced by the cross-section geometry
T Walter et al.
ULTRAMICROSCOPY (2000)
Defects in semiconductors and their effects on devices
S Mahajan
ACTA MATERIALIA (2000)