Thermal annealing property of KOTiPO4 planar and ridge waveguides formed by MeV Si ion implantation

We report on the formation of KOTiPO4 optical ridge waveguide combined ion implantation and Ar-ion beam etching in this manuscript. We used 6 MeV silicon ion implanted into our samples with the fluence of 6 x 10(14) ions/cm(2), which is relative high values for both energy and fluence. The guided mode and light propagation properties were investigated by prism-coupling and end-face coupling method. Numerical simulation was performed based on the reconstructed 2D refractive index profile of waveguides cross section for comparison. We obtain non-leaky waveguide structure in n(x) direction after proper annealing treatment. The fabricated waveguide structures emerge as promising candidate for photonic design which will work at high temperature. (C) 2013 Optical Society of America