期刊
OPTICAL MATERIALS EXPRESS
卷 3, 期 1, 页码 35-46出版社
OPTICAL SOC AMER
DOI: 10.1364/OME.3.000035
关键词
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资金
- European Commission [224312 HELIOS]
- FP7-ERC- MIRACLE project
Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in silicon photonics. For this integration, it is essential to have a reliable and robust bonding procedure, which also provides a uniform and ultra-thin bonding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed silicon-on-insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. This cold bonding method significantly simplifies the bonding preparation for machine-based bonding both for die and wafer-scale bonding. High-quality bonding, with ultra-thin bonding layers (<50 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers. (C) 2012 Optical Society of America
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