High active carrier concentration in n-type, thin film Ge using delta-doping

We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 x 10(20)cm(-3), and uniform activated dopant concentrations above 4 x 10(19)cm(-3) in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of phosphorus diffusion source is shown. (c) 2012 Optical Society of America