4.6 Article

Nanopatterning of atomic layer deposited Al:ZnO films using electron beam lithography for waveguide applications in the NIR region

期刊

OPTICAL MATERIALS EXPRESS
卷 2, 期 12, 页码 1743-1750

出版社

OPTICAL SOC AMER
DOI: 10.1364/OME.2.001743

关键词

-

资金

  1. DoD (CEAND) [W911NF-11-1-0209, W911NF-11-1-0133]
  2. NSF-CREST (CNBMD) [HRD 1036494]
  3. NSF-RISE [HRD-0931373]
  4. NSR-MRI

向作者/读者索取更多资源

We have demonstrated the nanopatterning of atomic layer deposited (ALD) Al:ZnO (AZO) films using electron beam lithography (EBL) for plasmonic waveguide applications. The influence of grains on repeatable planar nanostructures by nanolithography process was studied for annealed films in order to avoid effects of granularity. Our results demonstrate that the nanopatterning of AZO by the EBL technique is limited due to granularity of ALD grown AZO films. This finding suggests the limitations of ALD grown samples for optical applications where nanopatterns are fabricated by the EBL technique. Furthermore, the ALD grown films lose conductivity orders of magnitude on annealing. (C)2012 Optical Society of America

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据