Narrow band-edge photoluminescence from AglnS2 semiconductor nanoparticles by the formation of amorphous III-VI semiconductor shells

Nanoparticles of I-III-VI semiconductors are promising candidates for novel non-toxic fluorescent materials. However, removal of defect levels responsible for their broad-band emission has not been successful to date. The present study demonstrates, for the first time, the coating of core AglnS(2) nanoparticles-one of the I-III-VI group semiconductors with a bandgap in the visible region-with III-VI group semiconductors. The AglnS(2)/InSx and AglnS(2)/GaSx (x = 0.8-1.5) core/shell structures generate intense narrow-band photoluminescence originating from a band-edge transition at a wavelength shorter than that of the original defect emission. Microscopic analyses reveal that the GaSx shell has an amorphous nature, which is unexpected for typical shell materials such as crystalline lattice-matching ZnS. Single-particle spectroscopy shows that the average linewidth of the band-edge photoluminescence is as small as 80.0 meV (or 24 nm), which is comparable with that of industry-standard II-VI semiconductor quantum dots. In terms of photoluminescence quantum yield, a value of 56% with nearly single-band emission has been achieved as a result of several modifications to the reaction conditions and post-treatment to the core/shell nanoparticles. This work indicates the increasing potential of AglnS(2) nanoparticles for use as practical cadmium-free quantum dots.