Characteristics of Poly(vinyl alcohol)/Lead Sulphide Quantum Dot Device

Lead Chalcogenides quantum dots are ideal for fundamental studies of strongly quantum confined systems with possible technological applications. Tunable electronic transitions at near-infrared wavelengths can be obtained with these quantum dots. Applications of lead chalcogenides encompass quite a good number of important fields viz, the fields of telecommunications, medical electronics, optoelectronics etc. Very recently, it has been proposed that 'memristor' (Memory resistor) can be realized in nanoscale systems with coupled ionic and electronic transports. The hystersis characteristics of 'memristor' are observed in many nanoscale electronic devices including semiconductor quantum clot devices. This paper reports synthesis of lead Sulphide quantum dots embedded in Poly Vinyl alcohol matrix by chemical route. The fabricated samples are characterized by UV-visible Spectroscopy, Photoluminescence Spectroscopy, X-ray diffraction, Energy Dispersive X-ray Spectroscopy, High Resolution Transmission Electron Microscopy, Selected Area Electron Diffraction. Observed characteristics confirm nano formation. The as-fabricated Poly Vinyl Alcohol/lead Sulphide quantum dot devices exhibit hysteresis behaviour of memristor. For the application as memory unit/device, capacitance-voltage and conductance-voltage, frequency-dependent measurements are to be clone.