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Ch. Bloemers et al.
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Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy
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E. O. Schaefer-Nolte et al.
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F. Bechstedt et al.
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D. R. Khanal et al.
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T. Richter et al.
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Raman scattering study of the long-wavelength longitudinal-optical-phonon-plasmon coupled modes in high-mobility InN layers
Ramon Cusco et al.
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Satoshi Harui et al.
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Thomas Richter et al.
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Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns
S. Lazic et al.
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A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN
C. S. Gallinat et al.
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Raffaella Calarco et al.
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Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy
J. Grandal et al.
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Microscopic origins of surface states on nitride surfaces
Chris G. Van de Walle et al.
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Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)
R. K. Debnath et al.
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Fernando Patolsky et al.
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Yat Li et al.
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T. Palacios et al.
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Fernando Patolsky et al.
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HJ Fan et al.
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F Qian et al.
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AB Greytak et al.
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C Thelander et al.
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Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms
F Demangeot et al.
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Y Huang et al.
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J Wu et al.
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Intrinsic electron accumulation at clean InN surfaces
I Mahboob et al.
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The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy
E Dimakis et al.
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Effects of the narrow band gap on the properties of InN
J Wu et al.
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CH Liang et al.
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One-dimensional heterostructures in semiconductor nanowhiskers
MT Björk et al.
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Improvement on epitaxial grown of InN by migration enhanced epitaxy
H Lu et al.
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