期刊
MATERIALS
卷 5, 期 11, 页码 2137-2150出版社
MDPI
DOI: 10.3390/ma5112137
关键词
self-assembly semiconducting; molecular beam epitaxy (MBE); nanoscale; electrical properties; III-V; optical properties; optoelectronic; photoconductivity
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
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