相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。First principles study of Bismuth alloying effects in GaAs saturable absorber
Dechun Li et al.
OPTICS EXPRESS (2012)
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
Muhammad Usman et al.
PHYSICAL REVIEW B (2011)
First-principles calculation of the physical properties of GaAs1-xBix alloys
M. Mbarki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2011)
Composition dependence of photoluminescence of GaAs1-xBix alloys
Xianfeng Lu et al.
APPLIED PHYSICS LETTERS (2009)
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1-xBix
G. Pettinari et al.
APPLIED PHYSICS LETTERS (2008)
Bismuth alloying in GaAs: a first-principles study
D. Madouri et al.
COMPUTATIONAL MATERIALS SCIENCE (2008)
Bi isoelectronic impurities in GaAs
S. Francoeur et al.
PHYSICAL REVIEW B (2008)
Valence band anticrossing in GaBixAs1-x
K. Alberi et al.
APPLIED PHYSICS LETTERS (2007)
Giant spin-orbit bowing in GaAs1-xBix
B. Fluegel et al.
PHYSICAL REVIEW LETTERS (2006)
Similar and dissimilar aspects of III-V semiconductors containing Bi versus N
Y Zhang et al.
PHYSICAL REVIEW B (2005)
General equivalent circuit for intermediate band devices:: Potentials, currents and electroluminescence
A Luque et al.
JOURNAL OF APPLIED PHYSICS (2004)
Band gap of GaAs1-xBix, 0<x<3.6%
S Francoeur et al.
APPLIED PHYSICS LETTERS (2003)
Molecular beam epitaxy growth of GaAs1-xBix
S Tixier et al.
APPLIED PHYSICS LETTERS (2003)
Characteristics of semiconductor alloy GaAs1-xBix
K Oe
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2002)
First-principles simulation: ideas, illustrations and the CASTEP code
MD Segall et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler
JH Gu et al.
OPTICS AND LASERS IN ENGINEERING (2001)