期刊
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
卷 9, 期 2, 页码 117-123出版社
IEEK PUBLICATION CENTER
DOI: 10.5573/JSTS.2009.9.2.117
关键词
Chemical bath deposition; PbxCd1-xS film; optical properties
PbxCd1-xS films are prepared in the composition range of 0.05 <= x <= 0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg = 0.41 eV) with CdS (Eg = 2.4 eV)
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