期刊
JOURNAL OF COMPUTATIONAL ELECTRONICS
卷 12, 期 2, 页码 85-93出版社
SPRINGER
DOI: 10.1007/s10825-013-0434-2
关键词
Graphene device; Dirac fermions; Green's function; Quantum transport; Negative differential resistance; Tunnel diode; Tunnel transistor
资金
- French ANR through project NANOSIM_GRAPHENE [ANR-09-NANO-016]
- French ANR through project MIGRAQUEL [ANR-10-BLAN-0304]
- Vietnamese National Foundation for Science and Technology Development (NAFOSTED) [103.02.64.09, 103.02.76.09]
By means of numerical simulation based on the Green's function formalism on a tight binding Hamiltonian, we investigate different possibilities of achieving a strong effect of negative differential resistance in graphene tunnel diodes, the operation of which is controlled by the interband tunneling between both sides of the PN junction. We emphasize on different approaches of bandgap nanoengineering, in the form of nanoribbons (GNRs) or nanomeshes (GNMs), which can improve the device behaviour. In particular, by inserting a small or even zero bandgap section in the transition region separating the doped sides of the junction, the peak current and the peak-to-valley ratio (PVR) are shown to be strongly enhanced and weakly sensitive to the length fluctuations of the transition region, which is an important point regarding applications. The study is extended to the tunneling FET which offers the additional possibility of modulating the interband tunneling and the PVR. The overall work suggests the high potential of GNM lattices for designing high performance devices for either analog or digital applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据