Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

By means of numerical simulation based on the Green's function formalism on a tight binding Hamiltonian, we investigate different possibilities of achieving a strong effect of negative differential resistance in graphene tunnel diodes, the operation of which is controlled by the interband tunneling between both sides of the PN junction. We emphasize on different approaches of bandgap nanoengineering, in the form of nanoribbons (GNRs) or nanomeshes (GNMs), which can improve the device behaviour. In particular, by inserting a small or even zero bandgap section in the transition region separating the doped sides of the junction, the peak current and the peak-to-valley ratio (PVR) are shown to be strongly enhanced and weakly sensitive to the length fluctuations of the transition region, which is an important point regarding applications. The study is extended to the tunneling FET which offers the additional possibility of modulating the interband tunneling and the PVR. The overall work suggests the high potential of GNM lattices for designing high performance devices for either analog or digital applications.